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| | | | | Digitalization in the design and management of the cost of construction of the facility
Irina Karakozova, and Yulia Prokhorova AIP Conference Proceedings 2657, 020033 (2022) Read the article → | | | | Structure optimization and electronic properties of full Heusler Fe2NbIn and half Heusler fenbin
Yazeed Alnafie, and Ranjan Kumar AIP Conference Proceedings 2451, 020057 (2022) Read the article → | | | | | First-principles study on structural, mechanical, and electronic properties of REAuBi2 (RE = La–Pr, Sm) intermetallic compounds
Xi Yu, Wei He, Tonghan Yang, Xiaowei Wu, Feikuo Chen, Weining Wu, Yifei Bi, and Cuiyun He AIP Advances 12, 105103 (2022) Read the article → |
| | | | | Equation of state of tungsten-doped carbon based on QEOS model for laser fusion
Peng Wang, Qing Ye, Xiaoxi Duan, Weiming Yang, Chen Zhang, Huan Zhang, Liang Sun, Hao Liu, Feng Wang, and Zhebin Wang AIP Advances 12, 105204 (2022) Read the article → |
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| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | Composition-dependent phase transformation path involving 4O martensite in Ni–Mn–Sn magnetic shape memory alloys
Yansong Li, Jing Bai, Shaodong Sun, Miao Jin, Yu Zhang, Xinzeng Liang, Jianglong Gu, Yudong Zhang, Claude Esling, Xiang Zhao, and Liang Zuo Journal of Applied Physics 132, 135110 (2022) Read the article → |
| | | | | | | | | | | | | Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements
Jiarui Gong, Zheyang Zheng, Daniel Vincent, Jie Zhou, Jisoo Kim, Donghyeok Kim, Tien Khee Ng, Boon S. Ooi, Kevin J. Chen, and Zhenqiang Ma Journal of Applied Physics 132, 135302 (2022) Read the article → |
| | | | Publisher's Note: "Triple electron–electron–proton excitations and second-order approximations in nuclear–electronic orbital coupled cluster methods" [J. Chem. Phys. 157, 074104 (2022)]
Fabijan Pavošević, and Sharon Hammes-Schiffer J. Chem. Phys. 157, 139901 (2022) Read the article → | | | | Erratum: "Electron and hole mobilities of GaN with bulk, quantum well and HEMT structures" [J. Appl. Phys. 130, 125701 (2021)]
Chihiro Hamaguchi Journal of Applied Physics 132, 139903 (2022) Read the article → | | | | | Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene
Hyukjoon Yoo, Kyungmoon Kwak, I. Sak Lee, Dongwoo Kim, Kyungho Park, Min Seong Kim, Jae Seong Han, Sujin Lee, Tae Sang Kim, Jun Hyung Lim, and Hyun Jae Kim Appl. Phys. Lett. 121, 141105 (2022) Read the article → |
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