Explore new open access articles from APL Electronic Devices |  | New Issue Online Now – Volume 1, Issue 4 | Featured below are the most recently published papers that are included in Volume 1, Issue 4 of APL Electronic Devices.
As associate editor Yee Sin Ang shares in his editorial "APL Electronic Devices and our peer reviewers act as trusted guides, helping ensure that computational contributions of the highest caliber find their place within the electronic device community. We welcome all forms of computational work: from original research and "Not Turing" reviews to industry perspective, innovative methodologies, and new simulation tools. The bar is high, but rightly so. Together, we can propel this vibrant and fast-moving frontier forward—to boldly simulate what no one has simulated before." | | As an open access journal, articles in APL Electronic Devices are always available to read, download, and share—no subscription needed. | | | | | 2D semiconductors and computational electronics Yee Sin Ang
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Tuning electronic transport properties of in-plane-graphene–h-BN superlattices for improved thermoelectric material Wenusara Satheekshana, Pasan Henadeera, Nalaka Samaraweera, Galhenage Asha Sewvandi
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| | |  Polar solvent-enhanced PEDOT:PSS-based elastomer as a self-healing film for strain sensing and human motion monitoring Wenqing Chen, Wei Huang, Abbas Heydari, Eirini Velliou, et al.
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| | | Doping and thickness optimization of the blue thermally activated delayed fluorescence organic electroluminescence diode Manas Misra, Nrita Gaur, Gangadhar Banappanavar, Johns Aji, et al.
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| | | Reduced graphene oxide boosted performance of tin dioxide resistive sensor for temperature-sensing applications Firoz Khan, Mohammad Rahil, Chetan Awasthi, C. M. Julien, et al.
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| | | Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias Ranie S. Jeyakumar, Swaroop Ganguly, Dipankar Saha
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| | | Modeling the dynamic capacitance of an LED in forward bias Diego Vargas Romero, Jean-Paul M. G. Linnartz, Jacobus L. M. van Mechelen
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| | | 2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width Chinmoy Nath Saha, Saurav Roy, Yizheng Liu, Carl Peterson, et al.
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| | | Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration James Spencer Lundh, Brianna A. Klein, Tatyana I. Feygelson, Daniel J. Pennachio, et al.
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| | | Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, et al.
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| | | Density functional theory study of organic hydrate crystals with increased piezoelectric polarization Geetu Kumari, Shubham Vishnoi, Sarah Guerin
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| | | Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs Kyle J. Liddy, Weisong Wang, Dennis E. Walker Jr., Kuan Chang Pan, et al.
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| | |  Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping Somaditya Santra, Sankalp Samdariya, Shaili Sett, Kenji Watanabe, et al.
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| | | Electro-thermal co-design of vertical β-Ga2O3 Schottky diodes with high-permittivity BaTiO3 field-plate for high-field and thermal management Ahsanul Mohaimeen Audri, Chung-Ping Ho, Emerson J. Hollar, Jingjing Shi, et al.
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| | | Kinetic control of ferroelectricity in epitaxial barium titanate thin film capacitors Harish Kumarasubramanian, Prasanna Venkatesan Ravindran, Ting-Ran Liu, Taeyoung Song, et al.
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| | | InAs sidewall tunnel diodes enabled by surface states Sungjae Hong, Aaron J. Muhowski, Victor J. Patel, Evan M. Anderson, et al.
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| | | P-type ZnO:N thin films for flexible electronics: The effect of controlled bending cycles on flexible micro-p–n junctions Angel Regalado-Contreras, Angélica Garzón-Fontecha, María del Carmen Maya-Sanchez, Wencel De La Cruz
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| | | Monolithically integrated pixel architecture with colloidal quantum dots and thin film transistors for SWIR imaging Yunrui Jiang, Hexuan Peng, Yalun Tang, Longhui Zeng, et al.
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| | | Electrostatics, scaling, and variability in stacked graphene nanoribbon FETs without metal interlayers Paul Jonghyuk Park, Mayuri Sritharan, Christopher Phillips, Youngki Yoon
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| | | On the origin and suppression of parasitic channel in AlN/GaN/AlGaN back barrier RF devices L. Ben Hammou, F. Grandpierron, E. Carneiro, K. Ziouche, et al.
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| | | Fast power switching with cascode diamond MOSFET–SiC MOSFET/GaN HEMT complementary half-bridge inverter Sora Kawai, Nobutaka Oi, Takanori Isobe, Kosuke Ota, et al.
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| | | Asymmetric resonant ferroelectric tunnel junctions for simultaneous high tunnel electroresistance and low resistance-area product Balram Khattar, Adarsh Tripathi, Manmohan Brahma, Abhishek Sharma
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| | | Revisiting BPW34 photodiodes as proton dosimeters Cher Ming Tan, Vishal Srivaths, Rajarshi Sarkar, Debraj Banerjee, et al.
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| | | Experimental characterization and theoretical analysis of K- to V-band GaN Hi-Lo IMPATT diodes Zhongtao Zhu, Lina Cao, Juncheng Xiong, Wesley Turner, et al.
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| | | Controlled size Ag nanoparticle doped CSA-PANI composite for efficient ultraviolet photodetection Shivani Sharma, Rishibrind Kumar Upadhyay, Dipika Sharma, Satinder K. Sharma
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| | | Micro-transfer printing of GaN HEMTs on engineered substrates for use in harsh environments Owen R. Meilander, Lisa Sebastian, Emanuela Riglioni, Haley E. Dishman, et al.
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| | |  Demonstration of AlGaAs/GeSn p-i-n diodes Yang Liu, Yiran Li, Sudip Acharya, Jie Zhou, et al.
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| | | Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors F. Morisot, Z. Fellahi, T. Arjmand, S. Sharma, et al.
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| | | Fully inkjet printed flexible SWCNT based TFT: Impact of traps on characteristics Manoranjan, Paramita Kar Choudhury, Y. N. Mohapatra
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| | | Graphene-buffered modulation of contact properties in Co/PtSSe vertical heterocontacts for spinFET applications Saheb Bera
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| | | Barrier electrostatics and contact engineering for ultra-wide bandgap AlGaN HFETs Seungheon Shin, Can Cao, Jon Pratt, Yinxuan Zhu, et al.
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| | | Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate Ruixin Bai, Parthasarathy Seshadri, Jiahao Chen, Swarnav Mukhopadhyay, et al.
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| | | Quasiparticle theory of collective electron excitations in graphene M. Akbari-Moghanjoughi
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