Read the latest articles in General Physics | High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors  Seungheon Shin,Hridibrata Pal,Jon Pratt,John Niroula,Yinxuan Zhu,Chandan Joishi,Brianna A. Klein,Andrew Armstrong,Andrew A. Allerman,Tomás Palacios,Siddharth Rajan READ MORE >
| | |
 |
Follow us on social media | | | Copyright © 2025 AIP Publishing. All rights reserved. 1305 Walt Whitman Rd., Melville, NY 11747
You are receiving this email because you have opted-in to receive alerts from us. To guarantee delivery of this email please add alerts@aip-info.org to your address book and safe senders list.
If you no longer wish to receive emails from us then please unsubscribe or amend your settings.
Privacy Policy
| |
|
|
| | | | | | |
No comments:
Post a Comment