Frontiers in Nitride Semiconductors Research – Now Open for Submissions!

Submit to this Special Topic in Applied Physics Letters, Journal of Applied Physics, and AIP Advances View in Browser SUBMIT AN ARTICLE MANAGE MY ALERTS OUR JOURNALS Call for Papers Now Open for Submissions Joint Special Topic from Applied Physics Letters, Journal of Applied Physics, and AIP Advances: Frontiers in Nitride Semiconductors Research Group-III nitride semiconductors have wide and ultra-wide band gaps suited for a vital role in enabling electrification, sustainable energy and digitalization. The high breakdown field of such semiconductors make possible more efficient and compact solutions in infrastructure for electric power transmission and generation, and propulsion and charging of electric vehicles.  Group-III nitrides facilitate power generation and amplification at high frequencies and advanced photonic and optoelectronics such as micro-LEDs within the visible spectral range and UV lasers. The focus of this special topic is on the latest achievements in nitride semiconductor materials, devices, and integrated circuits relevant for sustainable applications in power electronics, high-frequency electronics and photonics. Topics covered include, but are not limited to: • Growth – Bulk crystal growth, III-nitride epitaxy, doping and point defects, nitride alloys, and heterostructures as well as growth methods and growth technologies, wafer processing, microstructures, nanostructures, theory, novel materials such as B and Sc containing III-nitrides, 2D materials, quaternary InAlGaN, etc. • Optical Devices – Nitride-based light emitters such as micro-LEDs, edge emitting laser diodes, VCSELs, multi-section laser diodes, UV-LEDs, UV-laser diodes, single photon emitters, tunnel-junction LEDs, photo-detectors, photovoltaics, nanophotonic physics and devices, frequency combs, non-linear optics, intersubband emitters, sensors, device technologies and simulations • Electronic Devices – Transistors, diodes, switches, amplifiers, power and RF applications, actuators, acoustic devices, device processing, transport and switching properties, contacts and reliability, device concepts and simulations • Novel materials and device concepts – Earth-abundant Nitride semiconductor materials, 2D Nitride materials, innovative device design and fabrication concepts, nitrides for new quantum technologies • Physics and Characterization – Optical and electronic properties of III-nitrides, including novel materials, structural analysis, defect characterization, nanophotonics, nanoelectronics, crystal band structures, electronic states of defects, theory and simulation Guest Editors Oliver Ambacher, University of Freiburg, Germany Vanya Darakchieva, Lund University, Sweden; Linköping University, Sweden Izabella Grzegory, Institute of High-Pressure Physics, Polish Academy of Sciences Åsa Haglund, Chalmers University, Sweden Erik Lind, Lund University, Sweden Piotr Perlin, Institute of High-Pressure Physics, Polish Academy of Sciences Filip Tuomisto, University of Helsinki, Finland Lars Samuelson, SusTech Southern University of Science and Technology, China Mathias Schubert, University of Nebraska Lincoln, USA; Lund University, Sweden This Special Topic collection is a joint initiative between Applied Physics Letters, Journal of Applied Physics, and AIP Advances, providing a unique opportunity to publish in the journal that best aligns with your research. Authors may submit to any of the three participating journals: Applied Physics Letters publishes short-format letters that emphasize rapid dissemination of novel data and physical insights. Authors can publish at no cost under a traditional license or choose Open Access for a fee of $3,800. Journal of Applied Physics features full-length articles that advance understanding in applied physics. Articles are published Open Access with no author fee, supported by the journal's Subscribe to Open model. AIP Advances is a fully Open Access, multidisciplinary journal covering all areas of the physical sciences. The Article Processing Charge is $1,800. If a manuscript is better suited to a different participating journal, the editorial team may recommend a transfer with the author's approval. Submission Deadline: January 30, 2026 SUBMIT TO APPLIED PHYSICS LETTERS > SUBMIT TO JOURNAL OF APPLIED PHYSICS > SUBMIT TO AIP ADVANCES > Tell Us What You Think! Did you like this email? Yes > No >  Follow us on social media   Copyright © 2025 AIP Publishing. All rights reserved. 1305 Walt Whitman Rd., Melville, NY 11747 You are receiving this email because you have opted-in to receive alerts from us. To guarantee delivery of this email please add journals@aip-info.org to your address book and safe senders list. If you no longer wish to receive emails from us then please unsubscribe or amend your settings. Privacy Policy