Welcome Dr. Xiaojun Wu, Our New Associate Editor

Learn more about Dr. Wu's research interests and publications View in Browser SUBMIT AN ARTICLE MANAGE MY ALERTS ABOUT THE JOURNAL APL Engineering Physics Now Open For Submissions Meet Our New Associate Editor, Dr. Xiaojun Wu I'm excited to be working with Prof. Singh on the launch and development of APL Engineering Physics. I look forward to working together with the team to make APL Engineering Physics a success! - Xiaojun Wu, Beihang University, Beijing, China Prof. Dr. Xiaojun Wu got her Ph.D degree from the Institute of Physics, Chinese Academy of Sciences in 2013. She worked for DESY in Germany as Homboldt Fellow from 2014-2017, and then joined in Beihang University since 2017. Her research interest is generation of high-power terahertz sources and their applications. As the first/corresponding author, she has published over 80 SCI papers and delivered more than 40 plenary/keynote reports at conferences. She has been selected into the National Ten Thousand Talents Program for Young Top Talents, and honored with titles including Alexander von Humboldt Fellow (Germany), the first Zhenyi Wang Award of the IRMMW-THz, the Young Scientist Award of the ISUPTW, and the Global Female Scientist Award in Ultrafast Science. We are honored to welcome Dr. Wu as associate editor of APL Engineering Physics. We invite you to browse her selected publications and learn more about her and the esteemed editorial board. SELECT ARTICLES AUTHORED BY DR. WU Megaelectronvolt electron acceleration driven by terahertz surface waves Xie-Qiu Yu, Yu-Shan Zeng, Li-Wei Song, Xiaojun Wu, et al. Nat. Photon. Generation of 13.9-mJ Terahertz Radiation from Lithium Niobate Materials Xiaojun Wu, Deyin Kong, Sibo Hao, Yushan Zeng, et al. Adv. Mat. Terahertz spin currents resolved with nanometer spatial resolution Jiahua Cai, Mingcong Dai, Sai Chen, Xiaojun Wu, et al. Appl. Phys. Rev. Room-temperature high-average-power strong-field terahertz source based on an industrial high-repetition-rate femtosecond laser Deyin Kong, Yichen Su, Cheng Song, Xiaojun Wu Photon. Res. External-Magnetic-Field-Free Spintronic Terahertz Strong-Field Emitter Shaojie Liu, Zejun Ren, Peng Chen, Xiaojun Wu Ultrafast Science Take Our Survey to Share Insights on Research Funding Reduced U.S. government research funding is significantly impacting scientific and medical research worldwide. To better understand and quantify these impacts, AIP Publishing is partnering with Delta Think, Inc. as part of a global, community-wide survey. Please take this brief, anonymous 5-minute survey to help us understand how these changes are affecting the research community. Your input is crucial to informing how organizations can respond and provide meaningful support. TAKE THE SURVEY NOW > Because this effort is being conducted in collaboration with multiple professional societies and organizations, you may receive more than one invitation to participate. Thank you for lending your voice to this important initiative. Your input is truly appreciated. Tell Us What You Think! Did you like this email? Yes > No >  Follow us on social media   Copyright © 2025 AIP Publishing. All rights reserved. 1305 Walt Whitman Rd., Melville, NY 11747 You are receiving this email because you have opted-in to receive alerts from us. To guarantee delivery of this email please add journals@aip-info.org to your address book and safe senders list. If you no longer wish to receive emails from us then please unsubscribe or amend your settings. Privacy Policy

Read the Latest Issue!

Explore new open access articles from APL Electronic Devices | No Article Processing Charges (APCs) Through December 31, 2025 View in Browser SUBMIT AN ARTICLE MANAGE MY ALERTS ABOUT THE JOURNAL APL Electronic Devices No Article Processing Charges (APCs) Through December 31, 2025 New Issue Online Now – Volume 1, Issue 3 In the video below, Associate Editor Wanyi Nie announces the publication of Volume 1, Issue 3 of APL Electronic Devices. She discusses the areas of research you will find within, including low-cost sensor circuits for plasma experiments and the nature of defect tolerance in halide perovskites. Also included is a new Industry Perspective around the limits of energy efficiency for conventional CMOS and the needs of adiabatic reversible computing. Further below is a complete list of all of the recently published papers in the issue. Get Your Work Read As an open access journal, articles in APL Electronic Devices are always available to read, download, and share—no subscription needed. SUBMIT AN ARTICLE > EDITORIAL Semiconductor device research in APL Electronic Devices, an Open Access AIP Publishing journal Marko J. Tadjer READ MORE >   INDUSTRY PERSPECTIVE Industry perspective: Limits of energy efficiency for conventional CMOS and the need for adiabatic reversible computing Michael P. Frank, Alexander J. Edwards READ MORE > PERSPECTIVE The nature of defect tolerance in (some) halide perovskites Koushik Biswas READ MORE > REVIEWS Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors Han Yan, Lixin Liu, Leyi Loh, Manish Chhowalla, et al. READ MORE > The renaissance of lateral power devices for high voltage applications Zineng Yang, Yuan Qin, Yuhao Zhang READ MORE > ARTICLES Dealing with coupling effect for accurate thermal profile prediction of BEOL interconnect in advanced technology nodes Shuying Wang, Yufei Sheng, Yonglin Xia, Hua Bao, et al. READ MORE > Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience Md Hafijur Rahman, Chintan Chavda, Nahid Sultan Al-Mamun, Sergei P. Stepanoff, et al. READ MORE > Thick conducting polymer films for ultra-low frequency stimulation Yaw O. Ansong Snr, Christopher M. Proctor READ MORE > Noncontact triboelectric nanogenerators based on fluorinated metal–organic frameworks for rotational energy harvesting and sensing Jiahao Ye, Gianfelice Cinque, Lorenzo Donà, Jin-Chong Tan READ MORE > Temperature dependence of I–V characteristics above room temperature of needle and junction contact Ge Schottky barrier diodes Riku Ando, Yoriko Suda, Ryota Akaike, Hideto Miyake, et al. READ MORE > High-k TiO2 dielectric thin films by atomic layer deposition on InAlN/GaN and ScAlN/GaN heterostructures Neeraj Nepal, Brian P. Downey, Matthew T. Hardy, David J. Meyer, et al. READ MORE > A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift Maciej Matys, Atsushi Yamada, Yoichi Kamada, Toshihiro Ohki READ MORE > Hardware implementation of tunable fractional-order capacitors by morphogenesis of conducting polymer dendrites Antoine Baron, Enrique H. Balaguera, Corentin Scholaert, Fabien Alibart, et al. READ MORE > Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations I. Charlet, F. Morisot, Y. Gobil, A. Anotta, et al. READ MORE > Rationally designed NiCo2S4/CoδSξ nanoflakes and redox-additive electrolyte: Boosting electrocatalytic activity Love Bansal, Bhumika Sahu, Partha Sarathi Rout, Nikita Ahlawat, et al. READ MORE > High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors Seungheon Shin, Hridibrata Pal, Jon Pratt, John Niroula, et al. READ MORE > A novel fluidic-based phase reconfiguration technique using embedded slot-coupled transmission lines for X-band applications Bidhan Ch Das, Nidhi S. Bhattacharyya READ MORE > Room temperature ferroelectricity and self-biased magnetoelectricity in SmFeO3 nanocomposite by 3D strain engineering Manisha Bansal, Lynette Keeney, Abhijeet Choudhury, Jialong Huang, et al. READ MORE > Non-Fourier thermal analysis of the self-heating effect in CMOS logic circuits Yonglin Xia, Yufei Sheng, Ru Jia, Jiaxuan Xu, et al. READ MORE > The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs D. Myren, M. S. Jamil, B. A. Klein, A. A. Allerman, et al. READ MORE > Inkjet-printed strain sensors for monitoring cylindrical pressure vessels Youri Nouchokgwe, Torsten Granzow, Stephanie Girod, Sebastien Gergen, et al. READ MORE > Low-cost sensors and circuits for plasma experiments: Characterizing power and illuminance Alessandro do Nascimento Vargas, Victor Miller, Ali Mesbah, Gabriele Neretti READ MORE > Quasi-vertical β-Ga2O3 Schottky diodes on sapphire using all-LPCVD growth and plasma-free Ga-assisted etching Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan READ MORE > Study and design nanotransistor using SEMIDV device simulator Chien-Ting Tung READ MORE > Internal field-driven redox control and shuttle suppression via ferroelectric Ba0.9Sr0.1TiO3 in lithium–sulfur batteries Ivan Castillo, Sunny Choudhary, Diana C. Liza Castillo, Balram Tripathi, et al. READ MORE > An analytical frequency domain model for magnetoelectric composite devices including higher bending modes Opal Cohen, Yonatan Calahorra READ MORE > Unlocking the hybrid piezo and pyroelectric nanogenerators performance by SiO2 nanowires confinement in poly(vinylidene fluoride) Juan Delgado-Alvarez, Hari Krishna Mishra, Francisco J. Aparicio, Xabier García-Casas, et al. READ MORE > Near-ideal vertical β-Ga2O3 Schottky diode reverse leakage current via sputtered ultra-high-κ BaTiO3 dielectric field-management Kyle J. Liddy, Nolan S. Hendricks, Weisong Wang, Aaron M. Adams, et al. READ MORE > High-accuracy inference using HfOxSy/HfS2 memristors Aferdita Xhameni, Antonio Lombardo READ MORE > Dominant carrier scattering mechanisms in VLS-grown Si nanowire MOSFETs Siddharth Kurup, Daniel Aziz, Amy C. Brummer, Michael A. Filler, et al. READ MORE > Modeling responses to heterogeneous adsorption in graphene FET biosensors via circuit simulation Shota Ushiba, Tomomi Nakano, Hiroki K. Sato, Hitoshi Imamura, et al. READ MORE > Exploring the role of uniaxial strain in modulating the functional properties of AlXF3 (X = Ge, Sn) for optoelectronics applications Ihtesham Ghani, Shams u. Zaman, Hongbin Zhuo, Zeguo Tang, et al. READ MORE > RF sputtered Ga2O3 thin-films for solar-blind UV-C detection: Investigating effects of crystallinity, stoichiometry, and ambient Sidhant Sharma, Phuong Y. Le, Martin W. Allen, Jim G. Partridge, et al. READ MORE > Hydrogen bonding-driven Ohmic contact in Sc2CT2 (T=H, F, OH) based field-effect transistors Jiaxiang Li, Zihao Xu, Yu Shu, Yinggan Zhang, et al. READ MORE > Take Our Survey to Share Insights on Research Funding Reduced U.S. government research funding is significantly impacting scientific and medical research worldwide. To better understand and quantify these impacts, AIP Publishing is partnering with Delta Think, Inc. as part of a global, community-wide survey. Please take this brief, anonymous 5-minute survey to help us understand how these changes are affecting the research community. Your input is crucial to informing how organizations can respond and provide meaningful support. TAKE THE SURVEY NOW > Because this effort is being conducted in collaboration with multiple professional societies and organizations, you may receive more than one invitation to participate. Thank you for lending your voice to this important initiative. Your input is truly appreciated. Tell Us What You Think! Did you like this email? Yes > No >  Follow us on social media   Copyright © 2025 AIP Publishing. All rights reserved. 1305 Walt Whitman Rd., Melville, NY 11747 You are receiving this email because you have opted-in to receive alerts from us. To guarantee delivery of this email please add journals@aip-info.org to your address book and safe senders list. If you no longer wish to receive emails from us then please unsubscribe or amend your settings. Privacy Policy